rn2970fe,RN2971FE 2000-12-26 1/2 toshiba transistor silicon pnp epitaxial type (pct process) (bias resistor built-in transistor) rn2970fe, RN2971FE switching, inverter circuit, interface circuit and driver circuit applications. ? two devices are incorporated into an extreme-super-mini (6 pin) package. ? incorporating a bias resistor into a transistor reduces parts count. reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. ? complementary to rn1970fe, rn1971fe equivalent circuit and bias resistor values maximum ratings (ta = = = = 25c) (q1, q2 common) characteristics symbol rating unit collector-base voltage v cbo ? 50 v collector-emitter voltage v ceo ? 50 v emitter-base voltage v ebo ? 5 v collector current i c ? 100 ma collector power dissipation p c (note) 100 mw junction temperature t j 150 c storage temperature range t stg ? 55~150 c note: total rating equivalent circuit (top view) r1 b c e 6 5 4 1 2 3 q1 q2 ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in g eneral can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibi lity of th e buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, a nd to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury o r damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in th e most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handlin g guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfun ction o r failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energ y control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion cont rol instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this docume n t shall be made at the customer?s own risk. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assume d b y toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from i ts use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation o r others. ? the information contained herein is subject to change without notice. 000707 eaa1
rn2970fe,RN2971FE 2000-12-26 2/2 electrical characteristics (ta = = = = 25c) (q1, q2 common) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = ? 50 v, i e = 0 ? ? ? 100 na emitter cut-off current i ebo v eb = ? 5 v, i c = 0 ? ? ? 100 na dc current gain h fe v ce = ? 5 v, i c = ? 1 ma 120 ? 400 collector-emitter saturation voltage v ce (sat) i c = ? 5 ma, i b = ? 0.25 ma ? ? 0.1 ? 0.3 v transition frequency f t v ce = ? 10 v, i c = ? 5 ma ? 200 ? mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz ? 3 6 pf rn2970fe 3.29 4.7 6.11 input resistor RN2971FE r1 ? 7 10 13 k ? type name marking rn2970fe RN2971FE type name y y k type name y y m
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